monocrystalline 125*125mm silicon wafer

itemparameterspec125*125mm 125*125mm dopantBtypePdimension 125±0.5mm 125±0.5mm diameter 150±0.5mm 165±0.5mm thickness200μm±20μmTTV≤30μmminority carrier time ≥10μsresistivity1～3Ω·cm cutting methodwire cuttingcrystal orientation (100) ±3°surface damage/saw mark≤15 μmbow≤50 μmoxygen conc. ≤1.0×1018 atoms/cm3carbon conc. ≤5.0×1016 atoms/cm3dislocation density ≤3000pcs/cm2No crack, no obvious saw mark, no obviour tactility, no annormal spot, no staindepth≤0.5mm;total length≤2.0mm;≤2/w, no sharp edge