According to the requirement of photovoltaic industry development, our company develops a new series of laser scribing machines, which can be widely used to scribe polycrystalline and mono crystalline silicon wafer, non-crystalline silicon solar cell, and to scribe and cut other substrate material of semiconductors such as silicon, Ge, GaAs Material and so on.
Configuration
SIde Pumped Diode Nd-YAG laser system with 15,000 hours.
Sound-optical modular
Numerical controlled X,Y working table
Step motor drive controlled by computer
Vacuum adsorbing system
Special cutting software
Advantage
The system of the machine is developed with international prevalent modularization design and its key components are all imported high-quality ones. It has gained customers’ acknowledgement and authorization.
• It has the very good performance of high scribing speed
• High precision
• Comprehensive functions
• Simple operation
• Long workable time
• Long term stability
Specifications
Wavelength
1.064 µm
Precision
≤ ± 1 µm
Max scribing depth
1,2mm
Min width of line
50 µm
Laser repetition frequency
Adjustable between 200HZ and 50KHZ
Max scribing speed
140mm/s(8, 4 m/min.)
Max power of laser
≥ 50W
Dimensions
65mm × 550mm × 750mm
Working table dimension
350mm × 350mm
Power supply
220 V )/50 Hz/2.5 kVA
Production efficiency
Level
2
3
4
8
16
22
Scribing speed
100~140 mm/s
Efficiency
Piece/min
9-12
8-9
4-6
2.5-4
1.5-2
0.8-1
Date Yield
16-20
kW
12-17
kW
8-9
kW
5.5
kW
3-3.5
kW
1.5-2
kW
Year Yield
MW/Year
4-4.8
3-4.3
2-2.3
1.3
0.8
0.45
Remark
1. 10 hours/per day, 250 days/per year.
2. 125mm 2.3W , 156mm