High Power Diode Laser Underarm Hair Removal Machine

High Power Diode Laser Underarm Hair Removal Machine QuickDetail: 1)LaserType:Diodelaser 2)Appliance:BeautySalon,SPA,Hospital,Homeetc 3)Feature:HairRemoval Diode Laser Hair Removal Laser System: Semiconductor laser hair removal machine is freezing through technological innovation, so that the treatment of head to negative temperature, unlike other laser burns the skin, to better protect the skin, hair follicle melanin by specific wavelength of laser absorption, and the heat exchange to destroy hair follicle, the laser energy can be shot down into the hair follicles within the hair follicle is destroyed energy decomposition, so that the hair follicles to stop growing, because the laser energy about 15% of the skin can penetrate the dermis layer, the epidermis and more with melanoma of the hair follicle deep through the heat damage to hair follicle degeneration and atrophy; achieve permanent hair removal results. Applications: Laser treatment head: permanent hair removal (beard, armpit hair, four limbs hair, etc.) RF treatment of head: improve the skin aging, soothe wrinkles, improve sagging skin, so as to restore the youth; Specifications: ---- Items | Data | Electronicproperties | | Currentflow: | 230VAC | Frequency: | 50HZ | Maximumpower: | 600W | Taxonomy | | Anti-electricshocktype | Itype | Degreeofprotectionagainstelectricshock | BFtype | Waterprooftype | GeneralInstrument | Workingenvironment | | Therangeoftheenvironmenttemperature | +15to+30 | Therangeoftherelativehumidity | 30to80 | TherangeofAtmosphericpressure | 86.0kpato106.0kpa | Theenvironmentofthetransportandstorage | | Therangeoftheenvironmenttemperature | +5to+55 | Therangeoftherelativehumidity | 30to80 | TherangeofAtmosphericpressure | 86.0kpato106.0kpa | ProductSpecifications | | High | | Long | | Wide | | Weight | About70Kg | Theparametersoflasertreatmenthandpiece(withinRF) | | Lightsource | SemiconductorlasersandRFsource | Spectralrange | 808nm | Outputenergydensity | 1100J/c(808nm); | RFoutputpowerdensity | 1-50mJ/cm2(RF) | RFenergy | 1Mhz(Bipolar) | Pulse | Singlepulse | Numberofpulses | 1~10 | Pulsewidth | 1-400ms | Deliversystem | DirectsapphireCoupling | Spot | 10mmX20mm | Operatingsystem | | OperatingInterface | 15"Colortouchscreen | Refrigeratingsystem | | refrigeratingsystem | Air-cooling,closedcoolingwatercycleandtunablesemiconductor | cryogenictemperature | 1525c | ----